www.irf.com 1 06/28/04 IRF6218PBF smps mosfet hexfet power mosfet notes through are on page 7 reset switch for active clamp reset dc-dc converters lead-free benefits applications low gate to drain charge to reduce switching losses fully characterized capacitance including effective c oss to simplify design (see app. note an1001) fully characterized avalanche voltage and current to-220ab s d g v dss r ds(on) max i d -150v 150m @v gs = -10v -27a absolute maximum ratings parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t c = 25c continuous drain current, v gs @ 10v a i d @ t c = 100c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t c = 25c maximum power dissipation w linear derating factor w/c dv/dt peak diode recovery dv/dt v/ns t j operating junction and c t stg storage temperature range soldering temperature, for 10 seconds mounting torque, 6-32 or m3 screw thermal resistance parameter typ. max. units r jc junction-to-case ??? 0.61 c/w r cs case-to-sink, flat, greased surface 0.50 ??? r ja junction-to-ambient ??? 62 1.6 250 max. -27 -19 -110 -150 20 300 (1.6mm from case ) 10 lbfin (1.1nm) 8.2 -55 to + 175
IRF6218PBF 2 www.irf.com s d g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage -150 ??? ??? v ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? -0.17 ??? v/c r ds(on) static drain-to-source on-resistance ??? 120 150 m ? v gs(th) gate threshold voltage -3.0 ??? -5.0 v i dss drain-to-source leakage current ??? ??? -25 a ??? ??? -250 i gss gate-to-source forward leakage ??? ??? -100 na gate-to-source reverse leakage ??? ??? 100 dynamic @ t j = 25c (unless otherwise specified) parameter min. typ. max. units gfs forward transconductance 11 ??? ??? s q g total gate charge ??? 71 110 q gs gate-to-source charge ??? 21 ??? nc q gd gate-to-drain ("miller") charge ??? 32 ??? t d(on) turn-on delay time ??? 21 ??? t r rise time ???70???ns t d(off) turn-off delay time ??? 35 ??? t f fall time ???30??? c iss input capacitance ??? 2210 ??? c oss output capacitance ??? 370 ??? c rss reverse transfer capacitance ??? 89 ??? pf c oss output capacitance ??? 2220 ??? c oss output capacitance ??? 170 ??? c oss eff. effective output capacitance ??? 340 ??? avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? -27 (body diode) a i sm pulsed source current ??? ??? -110 (body diode) v sd diode forward voltage ??? ??? -1.6 v t rr reverse recovery time ??? 150 ??? ns q rr reverse recovery charge ??? 860 ??? nc typ. ??? ??? conditions v ds = -50v, i d = -16a i d = -16a v ds = -120v conditions v gs = -10v v gs = 0v v ds = -25v ? = 1.0mhz 210 -16 mosfet symbol showing the integral reverse p-n junction diode. t j = 25c, i s = -16a, v gs = 0v t j = 25c, i f = -16a, v dd = -25v di/dt = -100a/s conditions v gs = 0v, i d = -250a reference to 25c, i d = -1ma v gs = -10v, i d = -16a v ds = v gs , i d = -250a v ds = -120v, v gs = 0v v ds = -120v, v gs = 0v, t j = 150c v gs = -20v v gs = 20v max. v gs = 0v, v ds = -1.0v, ? = 1.0mhz v gs = 0v, v ds = -120v, ? = 1.0mh z v gs = 0v, v ds = 0v to -120v v gs = -10v v dd = -75v i d = -16a r g = 3.9 ?
IRF6218PBF www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature 2 4 6 8 10 12 -v gs , gate-to-source voltage (v) 1.0 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 175c v ds = 50v 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = -27a v gs = -10v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top -15v -10v -8.0v -7.0v -6.0v -5.5v -5.0v bottom -4.5v 60s pulse width tj = 25c -4.5v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -4.5v 60s pulse width tj = 175c vgs top -15v -10v -8.0v -7.0v -6.0v -5.5v -5.0v bottom -4.5v
IRF6218PBF 4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area 1 10 100 -v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -v sd , source-to-drain voltage (v) 0.10 1.00 10.00 100.00 1000.00 - i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 1 10 100 1000 -v ds , drain-to-source voltage (v) 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1msec 10msec operation in this area limited by r ds (on) 100sec tc = 25c tj = 175c single pulse 0 1020304050607080 q g total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 - v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 120v v ds = 75v v ds = 30v i d = -16a
IRF6218PBF www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 10a. switching time test circuit v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms fig 9. maximum drain current vs. ambient temperature
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0.1 % + - 25 50 75 100 125 150 175 t c , case temperature (c) 0 5 10 15 20 25 30 - i d , d r a i n c u r r e n t ( a ) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.264 0.000285 0.206 0.001867 0.140 0.013518 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci= i / ri ci= i / ri
IRF6218PBF 6 www.irf.com fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 14a&b. basic gate charge test circuit and waveform fig 15a&b. unclamped inductive test circuit and waveforms fig 15c. maximum avalanche energy vs. drain current d.u.t. v d s i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v t p v (br)dss i as 0 20406080 -i d , drain current (a) 100 150 200 250 300 350 400 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) v gs = -10v 4 5 6 7 8 9 10 11 12 -v gs, gate -to -source voltage (v) 0 100 200 300 400 500 600 700 800 900 1000 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = -27a 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 500 600 700 800 900 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top -4.6a -6.3a bottom -16a
IRF6218PBF www.irf.com 7 repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 1.6mh, r g = 25 ? , i as = -17a. i sd -17a, di/dt -520a/s, v dd v (br)dss , t j 175c. pulse width 300s; duty cycle 2%. r is measured at t j of approximately 90c. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 06/04
dimensions are shown in millimeters (inches)
lead assignments 1 - gate 2 - drain 3 - source 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) min 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 3 outline conforms to jedec outline to-220ab. 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs. hexfet 1- gate 2- drain 3- source 4- drain lead assignments igbts, copac k 1- gate 2- collector 3- emitter 4- collector example: in the assembly line "c" t his is an irf 1010 lot code 1789 as s embled on ww 19, 1997 part numbe r assembly lot code dat e code year 7 = 1997 line c week 19 logo rectifier int ernat ional note: "p" in assembly line position indicates "lead-free" data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site.
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